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product specification www.jmnic.com silicon pnp power transistors 2SA1063 description ? with to-3 package ? low collector saturation voltage ? high transition frequency applications ? designed for general purpose switching and amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -6 v i c collector current -6 a i cm collector current-peak -10 a p c collector power dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3) and symbol
product specification www.jmnic.com 2 silicon pnp power transistors 2SA1063 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ;i b =0 -150 v v cesat collector-emitter saturation voltage i c =-4a ;i b =-0.4a -2.0 v v be base-emitter on voltage i c =-4a;v ce =-5v -1.8 v i cbo collector cut-off current v cb =-150v; i e =0 -50 | a i ebo emitter cut-off current v eb =-3v; i c =0 -50 | a h fe-1 dc current gain i c =-1a ; v ce =-5v 40 280 h fe-2 dc current gain i c =-4a ; v ce =-5v 20 f t transition frequency i c =-0.5a ; v ce =-5v 50 mhz ? h fe-1 classifications r q p o 40-80 60-120 90-180 140-280
product specification www.jmnic.com 3 silicon pnp power transistors 2SA1063 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)

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